1. PAPER:

  1. Tetsuya Yamamoto, Keizo Shinomori, Hisao Makino, "Tailoring of Electrical and Optical Properties of Metal Oxide Thin Films and Their Application to Antibacterial Materials", Journal of Japan Coating Technology Association, 57 (2022) pp. 44-53.
  2. Claudia Barone, Jeetendra Gupta, Rodica M. Martin, Ihor Sydoryk, Valentin Craciun, Junichi Nomoto, Hisao Makino, Tetsuya Yamamoto, Catalin Martin, "Robust Stability of Optical and Electronic Properties of Gallium‐Doped Zinc Oxide Thin Films to Gamma Ray Irradiation", physica status solidi (b) (2021)pp. 2100469-2100473.DOI:10.1002/pssb.202100469
  3. Tomoaki Terasako, Kohdai Hamamoto, Masakazu Yagi, Yutaka Furubayashi, Tetsuya Yamamoto, "Structural and photoluminescence properties of ZnO nanorods grown on various TCO seed layers by chemical bath deposition", Thin Solid Films 731 (2021) pp. 138803-1-8, DOI: 10.1016/j.tsf.2021.138803
  4. Yutaka Furubayashi, Makoto Maehara, Hisahi Kitami, Toshiyuki Sakemi, and Tetsuya Yamamoto, "Tailoring of carrier concentrations and engineering of band-gap for Sn-doped In2O3 films by postirradiation of negatively charged oxygen ions", J. Phys. D: Appl. Phys. 54 (2021) 145110-1-145110-12(12pp), https://doi.org/10.1088/1361-6463/abd3cd.
  5. Junichi Nomoto, Hisao Makino, Tetsuo Tsuchiya, and Tetsuya Yamamoto, "Chemical trends of n-type doping of Al, Ga, In and Ti donors for ZnO polycrystalline films deposited by direct-current magnetron sputtering", J. Appl. Phys., 128(2020)145303-1-145303-13, https://doi.org/10.1063/5.0021613.
  6. Yutaka Furubayashi, Makoto Maehara, and Tetsuya Yamamoto, "Factors limiting carrier transport of ultrathin W-doped In2O3 films", J. Phys. D: Appl. Phys. 53 (2020) 375103 (7pp).
  7. Yutaka Furubayashi, Shintaro Kobayashi, Makoto Maehara, Kazuhiko Ishikawa, Katsuhiko Inaba, Toshiyuki Sakemi, Hisashi Kitami, and Tetsuya Yamamoto, "Evolution of implicate order from amorphous to polycrystalline Sn-doped In2O3 films determined by in situ two-dimensional X-ray diffraction measurements", Appl. Phys. Express, 13 (2020) pp. 065502-1-065502-5.
  8. Junichi Nomoto, Hisao Makino, Tomohiko Nakajima, Tetsuo Tsuchiya, and Tetsuya Yamamoto, "Improvement of the properties of direct-currentmagnetron-sputtered Al-doped ZnO polycrystalline films containing retained Ar atoms using 10-nm-thick buffer layers", ACS Omega, 4(2019)pp.14526-14536.
  9. Yutaka Furubayashi, Makoto Maehara, Tetsuya Yamamoto,"Tailoring of Point Defects in Polycrystalline Indium Tin Oxide Films with Postirradiation of Electronegative Oxygen Ions", ACS Applied Electronic Materials, 1 (2019) pp. 1545-1551. https://pubs.acs.org/doi/10.1021/acsaelm.9b00317.
  10. Yutaka Furubayashi, Makoto Maehara, Tetsuya Yamamoto,"New insights on factors limiting the carrier transport in very thin amophous Sn-doped In2O3 films with high Hall mobility", Nanosclae Research Letters (2019) 14:120 https://doi.org/10.1186/s11671-019-2948-4.
  11. Tomoaki Terasako, Shohei Obara, Masakazu Yagi, Junichi Nomoto, Tetsuya Yamamoto, "Structural and photoluminescence properties of ZnO nanorods grown on ion-plated Ga-doped ZnO seed layers by chemical bath deposition and fabrication of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ZnO nanorods heterostructures", Thin Solid Films, 677 (2019) pp. 109-118.
  12. Junichi Nomoto, Tetsuo Tsuchiya, Tetsuya Yamamoto, "Well-defined (0001)-oriented aluminum nitride polycrystalline films on amorphous glass substrates deposited by ion plating with direct-current arc discharge", Applied Surface Science, 478 (2019) pp. 998-1003.
  13. Tetsuya Yamamoto, Yutaka Furubayashi, "Coating Method of Tailoring Advanced Functions of Metal-oxide Films Deposited on Polymer Substrates", IEEJ Transactions on Electronics, Information and Systems, Vol. 139, No. 3 (2019) pp. 185-191.DOI: 10.1541/ieejeiss. 139.185.
  14. Tomoaki Terasako, Shohei Obara, Shogo Sakaya, Mamoru Tanaka, Ryota Fukuoka,Masakazu Yagi, Junichi Nomoto, Tetsuya Yamamoto, "Morphology-controlled growth of ZnO nanorods by chemical bath deposition and seed layer dependence on their structural and optical properties", Thin Solid Fims, 669 (2019) pp. 141–150.
  15. Tomoaki Terasako, Yohei Ochi, Masakazu Yagi, Junichi Nomoto, Tetsuya Yamamoto, "Structural and optical properties of ZnO films grown on ion-plated Ga doped ZnO buffer layers by atmospheric-pressure chemical vapor deposition using Zn and H2O as source materials", Thin Solid Films, 663 (2018) pp. 79–84.
  16. Junichi Nomoto, Hisao Makino, Katsuhiko Inaba, Shintaro Kobayashi, Tetsuya Yamamoto, "Effects of the erosion zone of magnetron sputtering targets on the spatial distribution of structural and electrical properties of transparent conductive Al-doped ZnO polycrystalline films", DOI: 10.1063/1.5038162, J. Appl. Phys., 124(2018)065304-1-11.
  17. Huaping Song, Hisao Makino, Junichi Nomoto, Naoki Yamamoto, Tetsuya Yamamoto, "Improved moisture stability of thin Ga-doped ZnO films by indium codoping", Applied Surface Science, 457 (2018) pp. 241-246.
  18. Huaping Song, Hisao Makino, Masaaki Kobata, Junichi Nomoto, Keisuke Kobayashi, Tetsuya Yamamoto, "Effects of the carrier concentration on polarity determination in Ga-doped ZnO thin films by hard x-ray photoelectron spectroscopy", Applied Surface Science, 433 (2018) pp. 1148-1153.
  19. Tetsuya Yamamoto, Junichi Nomoto, Hisashi Kitami, Toshiyuki Sakemi, Hisao Makino, Keisuke Kobayashi, Yasushi Aoki, Seiichi Kishimoto, "Design of Advanced Functional ZnO Conductive Thin Film with Arc Plasma", J. Vac. Soc. Japan, 60 (2017) pp. 292-299.
  20. Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto, "Characteristics of the orientation distribution and carrier transport of polycrystalline Al-doped ZnO films prepared by direct current magnetron sputtering",Thin Solid Films, 644 (2017) pp. 33-40.
  21. Junichi Nomoto, Katsuhiko Inaba, Shintaro Kobayashi, Takeshi Watanabe, Hisao Makino, TetsuyaYamamoto, "Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering", Materials 10(8)(2017) pp. 916-933; doi:10.3390/ma10080916.
  22. Lukman, Hisao Makino, Seiichi Kishimoto, Junichi Nomoto, TetsuyaYamamoto, "Enhancement of the hydrogen gas sensitivity by large distribution of c-axis preferred orientation in highly Ga-doped ZnO polycrystalline thin films", Materials Science in Semiconductor Processing,68 (2017) pp. 322-326.
  23. Junichi Nomoto, Katsuhiko Inaba, Shintaro Kobayashi, Hisao Makino, Tetsuya Yamamoto,"Interface layer to tailor the texture and surface morphology of Al-doped ZnO polycrystalline films on glass substrates", Journal of Crystal Growth, 468 (2017) pp. 645-659.
  24. Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto, "Low-optical-loss transparent conductive Ga-doped ZnO films for plasmonics in the near-infrared spectral range", Science of Advanced Materials, 9 (2017) pp. 1815-1821.
  25. Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto,"Correlation between Carrier Transport and Orientation Evolution of Polycrystalline Transparent Conductive Al-Doped ZnO Films", Thin Solid Fims, 620 (2016) pp.2-9.
  26. Junichi Nomoto, Katsuhiko Inaba, Minoru Osada, Shintaro Kobayashi, Hisao Makino and Tetsuya Yamamoto, "Highly (0001)-orientated Al-doped ZnO polycrystalline films on amorphous glass substrates", J. Appl. Phys., 120(2016)125302.
  27. Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto, "High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation", Nanoscale Research Letters (2016) 11:320 DOI: 10. 1186/s11671-016-1535-1.
  28. Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto, "Limiting factors of carrier concentration and transport of polycrystalline Ga-doped ZnO films deposited by ion plating with dc arc discharge", Thin Solid Films, 601 (2016) pp. 13-17.
  29. Eiji Koabayashi, Yoshimi Watabe, Tetsuya Yamamoto and Yoichi Yamada, "Cerium oxide and hydrogen co-doped indium oxide films for high-efficiency silicon heterojunction solar cells", Solar Energy Materials and Solar Cells, 149 (2016) pp. 75-80.
  30. Tomoaki Terasako, Junichi Nomoto, Hisao Makino, Naoki Yamamoto, Sho Shirakata, Tetsuya Yamamoto, "Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge", Thin Solid Films, 596 (2015) pp. 24-28.
  31. Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto, "Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk", J. Appl.Phys. 117 (2015) pp. 045303-1-9.
  32. Eiji Kobayashi, Yoshimi Watabe and Tetsuya Yamamoto, "High-mobility transparent conductive thin films of cerium-doped hydrogenated indium oxide", Appl. Phys. Express, 8 (2015) pp. 015505-1-4.
  33. Seiichi Kishimoto, S. Akamatsu, Huaping Song, Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto, "Carbon monooxide gas sensing properties of Ga-doped ZnO film grown by ion plating with DC arc discharge", J. Sens. Sens. Syst., 3 (2014) pp. 331-334.
  34. 山本哲也、野本淳一、牧野久雄、"酸化亜鉛透明導電膜：低温製膜技術の現状と課題"、SPUTTERING & PLASMA PROCESSES, Vol. 29, No. 3 (2014.08.28)pp. 1-10.
  35. Hisao Makino, Huaping Song, Tetsuya Yamamoto, "Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates", Thin Solid Films, 559 (2014) pp. 78-82.
  36. Huaping Song, Junichi Nomoto, Hisao Makino and Tetsuya Yamamoto,"High moisture resistant Ga-doped ZnO films with textured surface for thin-film solar cells with indium codoping fabricated by ion plating with direct-current arc discharge", Jpn. J. Appl. Phys. 53 (2014) pp. 05FJ04-1-5.
  37. Huaping Song, Seiichi Kishimoto, Hisao Makino and Tetsuya Yamamoto, "Moisture Resistant Ga-Doped ZnO Films with Highly Transparent Conductivity for Use in Window Layers of Thin-Film Solar Cells", MRS Proceedings, 1538 (2013) pp. 209-214, mrss13-1538-c10-33 doi:10.1557/opl.2013.982. Symposium C – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls.
  38. Tomoaki Terasako, Y. Ogura, S. Fujimoto, Huaping Song, Hisao Makino, M. Yagi, Sho Shirakata, Tetsuya Yamamoto, "Carrier transport and photoluminescence properties of Ga-doped ZnO films grown by ion-plating and by atmospheric-pressure CVD",Thin Solid Films, 549 (2013) pp. 12-17.
  39. Tetsuya Yamamoto, Huaping Song and Hisao Makino, "Effects of grain boundary scattering on carrier transport of highly transparent conductive Ga-doped ZnO polycrystalline films", Phys. Status Solidi C 10, No. 4, (2013) pp. 603–606.
  40. Tomoaki Terasako, Huaping Song, Hisao Makino, Sho Shirakata and Tetsuya Yamamoto, "Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion-plating with DC arc discharge", Thin Solid Films, 528 (2013) pp. 19-25.
  41. Tetsuya Yamamoto, Huaping Song, Hisao Makino and N. Yamamoto, "Carrier Transport through Grain Boundaries in Highly Transparent Conductive Ga-doped ZnO Films", Invited, ECS Transactions, edit by D. Misra, D. Bauza, Z.Chen, T. Chikyo, H. Iwai, Y. Obeng and S. Datta, 45 (2012) pp.401-410.
  42. Naoki Yamamoto, Hisao Makino, Satoshi Osone, Akira Ujihara, Takahiro Ito, Hitoshi Hokari, Takeshi Maruyama and Tetsuya Yamamoto, "Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels", Thin Solid Films, 520 (2012) pp. 4131–4138.
  43. Naoki Yamamoto, Hisao Makino, Kirihiko Morisawa, and Tetsuya Yamamoto, "ZnO-based Transparent Electrodes for LCD TVs", ECS Trans. 41, issue 30 (2012)pp.29-35.
  44. Yasushi Sato, Hisao Makino, Naoki Yamamoto, Tetsuya Yamamoto, "Structural, electrical and moisture resistance properties of Ga-doped ZnO films", Thin Solid Films, 520 (2011) pp. 1395-1399.
  45. Hisao Makino, Yasushi Sato, Naoki Yamamoto, Tetsuya Yamamoto, "Changes in electrical and optical properties of polycrystalline Ga-doped ZnO thin films due to thermal desorption of zinc", Thin Solid Films, 520 (2011) pp. 1407-1410.
  46. Koichi Nagamoto, Kunihisa Kato, Satoshi Naganawa, Takeshi Kondo, Yasushi Sato, Hisao Makino, Naoki Yamamoto, Tetsuya Yamamoto, "Structural, electrical and bending properties of transparent conductive Ga-doped ZnO films on polymer substrates", Thin Solid Films, 520 (2011) pp. 1411-1415.
  47. Tetsuya Yamamoto, Huaping Song, Hisao Makino and Naoki Yamamoto, "Dominant role of grain boundary scattering on carrier transport of highly transparent conductive Ga-doped ZnO Films", World Journal of Engineering, 8, Issue Supplement (Sept. 01) (2011) pp. 1251-1252.
  48. Naoki Yamamoto, Hisao Makino and Tetsuya Yamamoto, "Young's Modulus and Coefficient of Linear Thermal Expansion of ZnOConductive and Transparent Ultra-Thin Films", Advances in Materials Science and Engineering, 2011, Article ID 136127 (2011) 10pages.
  49. Naoki Yamamoto, Hisao Makino, Yasushi Sato and Tetsuya Yamamoto, "Controlled Formation of ZnO Fine-pattern Transparent Electrodes by Wet-Chemical Etching", ECS Transactions, issue:Processes at the Semiconductor-Solution Interface 4, 35 (2011) pp. 165 - 172.
  50. Hisao Makino, Takahiro Yamada, Naoki Yamamoto and Tetsuya Yamamoto, "Effects of the O2 flow rate and post-deposition thermal annealing on the optical absorption spectra of Ga-doped ZnO films", Thin Solid Films, 519 (2010) pp. 1521-1524.
  51. Takahiro Yamada, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto,"Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films", J. Appl. Phys. 107, (2010) pp.123534-1-123534-8.
  52. Naoki Yamamoto, Takahiro Yamada, Hisao Makino and Tetsuya Yamamoto, ,"Heat Resistance of Ga-Doped ZnO Thin Films for Application as Transparent Electrodes in Liquid Crystal Displays", J. Electrochem. Soc., 157,(2) (2010) pp. J13-J20.
  53. Hisao Makino, Naoki Yamamoto, Aki Miyake, Takahiro Yamada, Yoshinori Hirashima, Hiroaki Iwaoka, Takahiro Itoh, Hitoshi Hokari, Hisashi Aoki and Tetsuya Yamamoto, "Influence of thermal annealing on electrical and optical properties of Ga-doped ZnO thin films", Thin Solid Films, 518, Issue 5 (2009) pp. 1386-1389.
  54. Aki Miyake, Takahiro Yamadaa, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto,"Properties of Highly Transparent Conductive Ga-Doped ZnO Films prepared on Polymer Substrates by Reactive Plasma Deposition with DC Arc Discharge", J. Photopolym. Sci. Technol. 22, No.4 (2009) pp.497-502.
  55. Hisao Makino, Aki Miyakea, Takahiro Yamadaa, Naoki Yamamotoa and Tetsuya Yamamoto,"Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass", Thin Solid Films, 517, Issue 10 (2009) pp. 3138-3142.
  56. Aki Miyake, Takahiro Yamada, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto, "Structural, electrical and optical properties of Ga-doped ZnO films on cyclo-olefin polymer substrates", Thin Solid Films, 517, Issue 10 (2009) pp. 3130-3133.
  57. Takahiro Yamada, Aki Miyake, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto, "Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion plating using direct-current arc discharge",Thin Solid Films, 517, Issue 10 (2009) pp. 3134-3137.
  58. Aki Miyake, Takahiro Yamada, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto, "Effect of substrate temperature on structural, electrical and optical properties of Ga-doped ZnO films on cycro olefin polymer substrate by ion plating deposition", Thin Solid Films, 517, issue 3 (2008) pp.1037-1041.
  59. Takahiro Yamada, Toshiyuki Morizane, Tetsuhiro Arimitsu, Aki Miyake, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto,"Application of low-resistivity Ga-doped ZnO films to transparent electromagnetic interference shielding material", Thin Solid Films, 517, issue 3 (2008) pp.1027-1031.
  60. Naoki Yamamoto, Takahiro Yamada, Aki Miyake, Hisao Makino, Seiichi Kishimoto, and Tetsuya Yamamoto, "Relationship Between Residual Stress and Crystallographic Structure in Ga-Doped ZnO Film", J. Electrochemical Soc., 155, No.9, (2008) pp. J221-J225.
  61. Tetsuya Yamamoto, Takahiro Yamada, Aki Miyake, Toshiyuki Morizane, Tooru Arimitsu, Hisao Makino, Naoki Yamamoto, "Properties of Transparent Conductive Ga-Doped ZnO Films on Glass, PMMA and COP Substrates", Invited Paper, IEICE TRANSACTIONS on Electronics, E91-C, No.10,pp.1547-1553,Oct.01. 2008.
  62. Tetsuya Yamamoto, Takahiro Yamada, Aki Miyake, Hisao Makino and Naoki Yamamoto, "Ga-Doped Zinc Oxide: an Attractive Potential Substitute for ITO, Large Area Coating and Control of Electrical and Optical Properties on Glass and Polymer Substrates", J. Soc. Inf. Display 16/7 (2008) pp.713-719.
  63. H. Makino, S. Kishimoto, T. Yamada, A. Miyake, N. Yamamoto, T. Yamamoto, "Effects of surface treatment on growth of ZnO on glass substrate", Physica Status Solidi (a), 205 (2008) pp. 1971-1974.
  64. Takahiro Yamada, Aki Miyakea, Seiichi Kishimotoa, Hisao Makinoa, Naoki Yamamotoa and Tetsuya Yamamoto, "Effects of substrate temperature on crystallinity and electrical properties of Ga-doped ZnO films prepared on glass substrate by ion-plating method using DC arc discharge", Surface and Coatings Technology, 202 (2007) pp. 973-976.
  65. Takahiro Yamada, Takuya Nebiki, Seiichi Kishimoto, Hisao Makino, Kiyoshi Awai, Tadashi Narusawa and Testuya Yamamoto, "Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition", Superlattices and Microstructures, 42 (2007) pp.68-73.
  66. K. Saito, Y. Hiratsuka, A. Omata, H. Makino, S. Kishimoto, T. Yamamoto, N. Horiuchi and H. Hirayama, "Atomic layer deposition and characterization of Ga-doped ZnO thin films", Superlattices and Microstructures, 42 (2007) pp.172-175.
  67. Takahiro Yamada, Aki Miyake, Seiichi Kishimoto, Hisao Makino, Naoki Yamamoto and Tetsuya Yamamoto, "Low-resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge", Appl. Phys. Lett. 91 (2007) 051915.
  68. Seiichi Kishimoto, Kunihiko Hayashi, Hirofumi Hamaguchi, Hisao Makino, Takahiro Yamada, Aki Miyake and Tetsuya Yamamoto, "Photoconductivity of Ga doped polycrystalline ZnO films grown by reactive plasma deposition", phys. stat. sol. (b) 244, No.5 (2007) pp. 1483-1489.
  69. Seiichi Kishimoto, Takahiro Yamada, Keigo Ikeda, Hisao Makino and Tetsuya Yamamoto, "Effects of oxygen partial pressure on film growth and electrical properties of undoped ZnO films with thickness below 100 nm", Surface & Coatings Technology 201 (2006) pp. 4004-4007.
  70. Takahiro Yamada, Keigo Ikeda, Seiichi Kishimoto, Hisao Makino and Testuya Yamamoto, "Effects of oxygen partial pressure on doping properties of Ga-doped ZnO films preppared by ion-plating with traveling substrate", Surface & Coatings Technology. 201 (2006) pp. 4000-4003.
  71. J.J. Kim, E. Ikenaga, M. Kobata, A. Takeuchi, M. Awaji, H. Makino, P.P. Chen, A. Yamamoto, T. Matsuoka, D. Miwa, Y. Nishino, T. Yamamoto, T. Yao, K. Kobayashi, "High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films", Applied Surface Science 252 (2006) pp.5602–5606.
  72. K. Sakai, T. Kakeno, T. Ikari, S. Shirakata, T. Sakemi, K. Awai and T. Yamamoto, "Defect centers and optical absorption edge of degenerated semiconductor ZnO thin films grown by a reactive plasma deposition by means of piezoelectric photothermal spectroscopy", J. Appl. Phys. 99 (2006) 043508 (7 pages).
  73. Minoru Osada, Toshiyuki Sakemi and TetsuyaYamamoto, "The effects of oxygen partial pressure on local structural properties for Ga-doped ZnO thin films", Thin Solid Films, 494 (2006) pp. 38-41.
  74. Sho Shirakataa, Toshiyuki Sakemi, Kiyoshi Awai, Tetsuya Yamamoto, "Electrical and optical properties of large area Ga-doped ZnO thin films prepared by reactive plasma deposition", Superlattices and Microstructures, 39 (2006) pp.218-228.
  75. Seiichi Kishimoto, Tetsuya Yamamoto, Yuuichi Nakagawa, Keigo Ikeda, Hisao Makino and Takahiro Yamada, "Dependence of electrical and structural properties on film thickness of undoped ZnO thin filmsd prepared by plasma-assisted electron beam deposition", Superlattices and Microstructures, 39 (2006) pp.306-313.
  76. Tetsuya Yamamoto, Takahiro Yamada, Toshiyuki Sakemi, Sho Shirakata, Minoru Osada, Seiichi Kishimoto, Kiyoshi Awai, Hisao Makino, T. Mitsunaga, "ZnO:Ga-Based transparent conductive films: An attractive potential for use in flat panel display", Ceramic Transactions 196 (2006) pp. 475-489.
  77. Tetsuya Yamamoto, Tooru Mitsunaga, Minoru Osada, Keigo Ikeda, Seiichi Kishimoto, Kiyoshi Awai, Hisao Makino, Takahiro Yamada, Toshiyuki Sakemi and Sho Shirakata, "Effects of oxygen-gas flow rate on lattice dynamics and microstructures for Ga-doped ZnO thin films prepared by reactive plasma deposition", Superlattices and Microstructures, 38 (2005) pp. 369-376.
  78. T. Kakeno, K. Sakai, H. Komaki, K. Yoshino, T. Sakemi, K. Awai, T. Yamamoto and T. Ikari, "Dependence of oxygen flow rate on piezoelectric photothermal spectra of ZnO thin films grown by a reactive plasma deposition", Materials Science and Engineering B 118 (2005) pp. 70-73.
  79. T. Takeuchi, Y. Harada, T. Tokushima, Y. Takata, A. Chainani, J. J. Kim, P. P. Chen, H. Makino, T. Hanada, T. Yao, T. Yamamoto, T. Tsukamoto, "Soft-X-ray spectroscopy of Diluted Magnetic Semiconductor Ga1-xMxN (M=Cr, Mn)", J. Electron Spectrosc. Relat. Ph., 144, pp.707-710 (2005).
  80. K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, S. Shirakata, K. Matsubara, H. Tampo, K. Sakurai, S. Ishizuka, S. Niki, "Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD) ", Thin Solid Films, 480-481 (2005) pp.199-203.
  81. J. J. Kim, H. Makino, T. Yao, Y. Takata, K. Kobayashi, T. Yamamoto, T. Hanada,M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, "Electronic structure of the Ga1-1xCrxN studied by high-energy photoemission spectroscopy", J. Electron Spectrosc. Relat. Ph., 144, pp.561-564 (2005).
  82. J. J. Kim, H. Makino, K. Kobayashi, Y. Takata, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin, and T. Yao "Hybridization of Cr 3d?N 2p?Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN", Phys. Rev. B70, pp. 161315-1(R)-161315-4 (2004).
  83. T. Takeuchi, Y. Harada, T. Tokushima, M. Taguchi, Y. Takata, A. Chainani, J. J. Kim, H. Makino, T. Yao, T. Yamamoto, T. Tsukamoto, S. Shin and K. Kobayashi, "Dopind-dependent changes in nitrogen 2p states in the diluted magnetic semiconductor Ga1-xCrxN", Phys. Rev. B70, pp. 245323-1-4 (2004).
  84. T. Yamamoto, T. Sakemi, K. Awai and S. Shirakata, "Control of Properties of ZnO Thin Films Prepared by DC-Arc Ion Plating Method", to be published in J. Vac. Soc. Japan （真空）Vol. 47, No. 10. pp. 741-747 (2004)
  85. Keisuke Kobayashi,Yasutaka Takata,Tetsuya Yamamoto,Jung-Jin Kim,Hisao Makino,Kenji Tamasaku,Makina Yabashi,Makina Yabashi,Daigo Miwa,Tetsuya Ishikawa, Shik Shin,Takafumi Yao, "Intrinsic Valence Band Study of Molecular Beam Epitaxial Grown GaAs and GaN by High Resolution Hard X-ray Photoemission Spectroscopy", Japanese Journal of Applied Physics Vol. 43, No. 8A (2004) pp. L 1029-L 1031.
  86. Y. Takata, K. Tamasaku, T. Tokushima, D. Miwa, S. Shin, T. Ishikawa M. Yabashi and K. Kobayashi, J. J. Kim, T. Yao, T. Yamamoto, M. Arita, H. Namatame, and M. Taniguchi, "A probe of intrinsic valence band electronic structure: Hard x-ray photoemission", Appl. Phys. Lett. 84, No.21 (2004) 4310-4312.
  87. T. Yamamoto, T. Sakemi, K. Awai and S. Shirakata, "Dependence of carrier concentrations on oxygen pressure for Ga-doped ZnO prepared by ion plating method", Thin Solid Films, 451-452 (2004) pp.439-442.
  88. S. Shirakata, T. Sakemi, K. Awai and T. Yamamoto, "Optical and electrical properties of URT-IP ZnO thin films for photovoltaic devices", Thin Solid Films, 451-452 (2004) pp.212-218.
  89. K. Iwata , T. Sakemi , A. Yamada , P. Fons , K. Awai , T. Yamamoto , M. Matsubara , H. Tampo , K. Sakurai , S. Ishizuka and S. Niki, "Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP(ion plating) method", Thin Solid Films, 451-452 (2004) pp.219-223.
  90. J. J. Kim, H. Makino, P. P. Chen, T. Hanada and T.Yao, K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, D. Miwa, K. Tamasaku, T. Ishikawa, S. Shin and T.Yamamoto, "High-energy photoemission spectroscopy of ferromagnetic GaMnN", Materials Science in Semiconductor Processing, 6 (2003) 503-506.
  91. K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, M. Matsubara, H. Tampo and S. Niki,"Growth and electrical properties of ZnO thin films deposited by novel ion plating method", Thin Solid Films, 445 (2003) 274-277.
  92. S. Shirakata, T. Sakemi, K. Awai and T. Yamamoto, "Optical and electrical properties of ZnO films prepared by URT-IP Method", Thin Solid Films, 445 (2003) 278-283.
  93. T. Nebiki , T.Yamamoto, T. Narusawa, M. B. H. Breese, E.J.Teo and F.Watt, "Focusing of MeV Ion Beams by Means of Tapered Glass Capillary Optics", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 21 (2003) 1671-1674.
  94. T. Sakemi, S. Shirakata, K. Iwata, K. Matsubara, H. Tampo, P. Fons, S. Niki, K. Awai and T. Yamamoto,"High-Quality Transparent Conducting Oxide Films Deposited by a Novel Ion Plating Technique", MRS Proceedings Volume 763, Symposium B Compound Semiconductor Photovoltaics, Editors: Rommel Noufi, William N. Shafarman, David Cahen, Lars Stolt
  95. Tetsuya Yamamoto,"Control of N-Impurity States in N-Doped ZnO, ZnS and ZnTe",
    Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L514-L516.
  96. Tetsuya Yamamoto, "Codoping for the fabrication of p-type ZnO",
    Thin Solid Films, 420-421 (2002) 100-106.
  97. Tetsuya Yamamoto, "Codoping Method for Solutions to Doping Problems in Wide-Band-Gap Semiconductors",
    physica status solidi (a) 193, No.3 (2002) 423-433.
  98. Seiichi Kishimoto, Tetsuya Yamamoto, and Seishi Iida,"Fabrication of p-Type ZnS With Blue-Ag Emission By Triple-Dodoping Method",
    Mat. Res. Soc. Symp. Proc., 719 (2002) 67-72 (Symposium F:Defect and Impurity Engineered Semiconductors and Devices III
    Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori,H. Okushi)
  99. Tetsuya Yamamoto,"Control of Valence States for ZnO and ZnS With a Wide-Band Gap by a Co-Doping Method",
    Mat. Res. Soc. Symp. Proc. 719 (2002) 463-468 (Symposium F:Defect and Impurity Engineered Semiconductors and Devices III
    Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori,H. Okushi)
  100. Shigemi Kohiki, Takayuki Suzuka, Masaoki Oku, Tetsuya Yamamoto, Seiichi Kishimoto, and Seishi Iida, "Coupling of codoped In and N impurities in ZnS:Ag: Experiment and theory", J. Appl. Phys. 91 (2002) 760-763.
  101. Tetsuya Yamamoto, Seiichi Kishimoto and Seishi Iida, "Materials Design for p-Type ZnS with Blue Ag Emission by Triple-Codoping Method",
    physica status solidi (b) 229 (2002) 371-375.
  102. Roland Scheer, I. Luck, M. Kanis, M. Matsui, T. Watanabe and T. Yamamoto, "Incorporation of the doping elements Sn, N, and P in CuInS2 thin films prepared by co-evaporation", Thin Solid Films 392 (2001) 1.
  103. Tetsuya Yamamoto, Seiichi Kishimoto and Seishi Iida, "Control of valence states for ZnS by triple-codoping method", Physica B: Condensed Matter, 308-310 (2001) 916-919.
  104. Tetsuya Yamamoto, Takayuki Watanabe and Yoshihiro Hamashoji, "Effects of codoping using Na and O on Cu-S divacancy in p-type CuInS2", Physica B: Condensed Matter, 308-310 (2001) 1007-1010.
  105. H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita, "Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment", J. Phys.:Condensed Matter 13 (2001) 8901-8914.
  106. Tetsuya Yamamoto and Hiroshi Katayama-Yoshida,
    "Physics and Control of Valence States in ZnO by Codoping Method"
    Physica B, 302/303 (2001) 155-162.
  107. H. Katayama-Yoshida, R. kato and T. Yamamoto, "New valence control and spin control method in GaN and AlN by codoping and transition atom doping", J. Crystal Grwoth 231 (2001) 428-436.
  108. Tetsuya Yamamoto and Takayuki Watanabe,"Control of deep levels in CuInS2 thin films by Na2O2 layer: Experiment and theory": Proc. 25th Int. Conf. on the Physics of Semiconductors (ICPS25), Osaka, 2000(Springer, Berlin, 2001)p.1451-1452.
  109. Tetsuya Yamamoto and Hiroshi Katayama-Yoshida,"Materials design for the fabrication of p-type ZnO by codoping method":Proc. 25th Int. Conf. on the Physics of Semiconductors (ICPS25), Osaka, 2000(Springer, Berlin, 2001)p.1409-1410.
  110. Tetsuya Yamamoto, Ilka V. Luck, Roland Scheer and Hiroshi Katayama-Yoshida,
    "Difference in Mechanism of Compensation by Cu Vacancies between n-type Zn- and Cd-doped CuInS2"
    Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 395-396.
  111. Tetsuya Yamamoto and Takayuki Watanabe,
    "Effcets of Na Incorporation on Electronic Structures pf p-type Cu-deficient CuInS2 Crystals"
    Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 257-258.
  112. Roland Scheer, Ilka V. Luck, M. Kanis, Masahiro Matsui, Takayuki Watanabe, and Tetsuya YAMAMOTO,
    "Incorporation of the doping elements N and P in CuInS2 thin films by co-evaporation"
    Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 160-161.
  113. Hiroshi Katayama-Yoshida and Tetsuya Yamamoto,
    "Theoretical Predictions for Codoping Properties in Wide-Band-Gap Semiconductors"
    Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 229-236.
  114. Tetsuya Yamamoto and Hiroshi Katayama-Yoshida,
    "Control of Valence States in ZnO by Co-doping Method"
    Mater. Res. Soc. Proc. 623 (2000) 223-234.
  115. K. Sato, H. Katayama-Yoshida and T. Yamamoto,
    "Materilas Design for the Low-Resistivity in p-Type ZnO and Transparent Ferromagnet with Transition Metal Atom Doped ZnO: Prediction vs. Experiment"
    Mater. Res. Soc. Proc. 623 (2000) 65-76.
  116. Hirofumi Tanaka, Hisamoto Harima, Tetsuya Yamamoto, Hiroshi Katayama-Yoshida, Yoshiyuki Nakata, and Yoshihiko Hirotsu
    "Electronic band structure and magnetism of Fe16N2 calculated by the FLAPW method"
    Phys. Rev. B62 (2000) 15042-15046.
  117. Takayuki Watanabe and Tetsuya Yamamoto
    "Control of Defects in CuInS2 Thin Films by Incorporation of Na and O"
    Jpn. J. Appl. Phys. 39 (2000) L1280 - L1282.
  118. Koichi Fukuzaki, Shigemi Kohiki, Tetsuya Yamamoto, Masaoki Oku and Takayuki Watanabe
    "Co-incorporation effects of O and Na with CuInS2 thin films"
    Appl. Phys. Lett. 77 (2000) 2713-2715.
  119. Tetsuya Yamamoto, Ilka V. Luck and Roland Scheer
    "Materials Design of n-Type CuInS2 Thin Films Using Zn or Cd Speices"
    Appl. Surf. Sci. 159-160 (2000) 350-354.
  120. Tetsuya Yamamoto, Koichi Fukuzaki and Shigemi Kohiki
    "Influence of incorporation of Na on p-type CuInS2 thin films"
    Appl. Surf. Sci. 159-160 (2000) 345-349.
  121. T. Yamamoto and H. Katayama-Yoshida
    "Unipolarity of ZnO with a wide-band gap and its solution using codoping method",
    Journal of Crystal Growth 214/215 (2000) 552-555.
  122. T. Yamamoto and H. Katayama-Yoshida
    "Effects of oxygen incorporation in p-type AlN crystals doped with carbon species",
    Physica B, 273-274 (1999) 113-115.
  123. T. Yamamoto, I. V. Luck, R. Scheer, and H. Katayama-Yoshida
    "Differences in the electronic structures and compensation mechanism
    between n-type Zn- and Cd-doped CuInS2 crystals",
    Physica B, 273-274 (1999) 927-929.
  124. H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita
    " Codoping in wide band-gap semiconductors",
    Inst. Phys. Conf. Ser. 162 (1999) 747-756.
    25Th Int. Symp. Compound Semiconductors, Nara, Japan, 12-16 October 1998. Invited.
  125. 福崎浩一，古曵重美，山本哲也，渡辺隆行，吉川英樹，福島整，小島勇夫
    K. Fukusaki, S. Kohiki, T. Yamamoto, T. Watanabe, H. Yoshikawa, S. Fukushima and I. Kojima
    カルコパイライト型 CuInS2 薄膜表面のＸ線光電子分光と第一原理バンド計算、
    X-Ray Photoelectron Spectroscopy and ab-initio Electronic Band Structure Calculation of
    Chalcopyrite Structure CuInS2 Thin Film Surfaces, Ｘ線分析の進歩 30 (1999) 111-121.
  126. T. Yamamoto and H. Katayama-Yoshida、
    " Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO",
    Jpn. J. Appl. Phys. 38 (1999) L166-L169.
  127. T. Yamamoto,
    "Effects of Na Incorporation in p-Type CuInS2",
    Jpn. J. Appl. Phys. 37 (1998) L1478-L1480.
  128. H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita,
    "Comparison Between the Thoretical Prediction of Codoping and the Recent Experimental Evidences
    in p-type Gan, AlN, ZnSe, CuInS2 and n-type Diamond",
    phys. stat. sol.(b) 210 (1998) 429-436., 8th Int. Conf. Shallow-Level Centers in Semiconductors,
    Montpellier, 1998. Invited.
  129. T. Yamamoto and H. Katayama-Yoshida、
    “A CODOPING METHOD OF FABRICATING HIGH-CONDUCTIVITY P-TYPE SEMICONDUCTORS WITH A WIDE-BAND GAP BY
    AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS",
    Proc. of The 24th Int. Conf. on the Physics of Semiconductors, (1998).
  130. T. Yamamoto and H. Katayama-Yoshida,
    "Role of n-type Codopants on Enhancing p-type Dopants Incorporation in p-type Codoped ZnSe",
    Mater. Res. Soc. Proc. 510 (1998) 67-72.
  131. T. Yamamoto and H. Katayama-Yoshida,
    "Role of Cl or I Codoping on Enhancing Li doping in ZnSe",
    Jpn. J. Appl. Phys. 37(1998) L910-L912.
  132. T. Yamamoto and H. Katayama-Yoshida,
    " A CODOPING METHOD IN CuInS2 PROPOSED BY ab initio ELECTRONIC-STRUCTURE CALCULATIONS",
    Inst. Phys. Conf. Ser. 152 (1998) 37-41.
    11Th Int. Conf. Ternary and Multinary Compounds, Salford, 1997. Invited.
  133. H. Tanaka, H. Harima, T. Yamamoto, H. Katayama-Yoshida, Y. Nakata and Y. Hirotsu,
    " Theoretical study of electronic band structures and magnetic property of Fe16N2 based on FLAPW calculations ",
    J. Magnetism and Magnetic Materials, 177-181 (1998) 1468-1469.
  134. T. Yamamoto and H. Katayama-Yoshida,
    " Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O
    as the donor codopants ", Journal of Crystal Growth, 189/190 (1998) 532-536.
  135. T. Yamamoto and H. Katayama-Yoshida,
    "INFLUENCE OF INTRINSIC DEFECTS AND S SUBSTITUTIONS ON ELECTRICAL PROPERTIES OF CHALCOPYRITE CuInS2 COMPOUNDS",
    7th Int. Conf. on Shallow-Level Centers in Semiconductors, Amsterdam, 1996 (World Scientific, Singapore, 1997) pp. 477-82.
  136. H. Katayama-Yoshida and T. Yamamoto,
    "New Doping Method in Semiconductors Proposed by ab initio Electronic Calculation",
    Proc. of the 1997 Inter. Conf. on SOLID STATE DEVICES AND MATERIALS, HAMAMATSU, (1997) 32-63. Invited.
  137. T. Yamamoto and H. Katayama-Yoshida,
    "A Codoping Method in GaN Proposed by ab initio Electronic-Structure Calculations",
    Materials Science Forum 258-263 (1997) 1185-1190.
  138. T. Yamamoto and H. Katayama-Yoshida,
    "Control of valence states by a codoping method in CuInS2",
    Solar Energy Materials and Solar Cells, 49 (1997) 391-397.
  139. T. Yamamoto and H. Katayama-Yoshida,
    "CONTROL OF VALENCE STATES BY A CODOPING METHOD IN P-TYPE GaN MATERIALS",
    Mater. Res. Soc. Proc. 468 (1997) 105-110.
  140. H. Katayama-Yoshida and T. Yamamoto,
    "Materials Design of the Codoping for the Fabrication of Low-resistivity p-type ZnSe and GaN by ab-initio Electronic Structure Calculations",
    phys. Stat. Sol. (b) 202, (1997) 763-773.
  141. T. Yamamoto and H. Katayama-Yoshida,
    "Materials Design for the Fabrication of Low-resistivity p-Type GaN Using a Codoping Method",
    Jpn. J. Appl. Phys. 36 (1997) L180-L183.
  142. T. Yamamoto and H. Katayama-Yoshida ,
    "p-Type Doping of Group V Elements in CuInS2",
    Jpn. J. Appl. Phys. 36 (1996) L1562-L1565.
  143. T. Yamamoto and H. Katayama-Yoshida,
    "Electronic Structure of p-Type CuInS2",
    Mater. Res. Soc. Proc. 426 (1996) 201-206.
  144. T. Yamamoto and H. Katayama-Yoshida,
    "Electronic Structures and Effects of S Substitutions in CuIn(S0.875X0.125)2 (X=O, N, P, C, Si or B)",
    Jpn. J. Appl. Phys. 35 (1996) L370-L373.
  145. T. Yamamoto and H. Katayama-Yoshida,
    "INFLUENCE OF INTRINSIC DEFECTS ON THE ELECTRONIC STRUCTURE OF NON-STOICHIOMETRIC CuInS2 CHALCOPYRITE STRUCTURE",
    Materials Science Forum, Switzerland 196-201 (1996) 1667-1672.
  146. T. Yamamoto and H. Katayama-Yoshida,
    "New Functionality of Magnetic-Semiconductor-Hybrid Quantum-Dot",
    応用磁気研究会資料, MSJ 92-5
  147. T. Yamamoto and H. Katayama-Yoshida,
    "Physics and Control of Conduction Type in CuInS2 with Defect Chalcopyrite Structure",
    Jpn. J. Appl. Phys. 34 (1995) L1584-L1587.
  148. T. Yamamoto and H. Katayama-Yoshida,
    "THE ELECTRONIC STRUCTURE OF NON-STOICHIOMETRIC CuInS2 AND THE STUDY OF DEFECTS LEVELS OF CuInS2 WITH
    CHALCOPYRITE STRUCTURE",
    Crystal Research and Technology, 31 (1995) 97-100.
  149. Fusayoshi J. Ohkawa and Tetsuya Yamamoto,
    "ATTRACTIVE INTERACTIONS DUE TO RKKY EXCHANGE INTERACTIONS IN HEAVY ELECTRON SUPERCONDUCTORS",
    Physica 148B (1987) 84-86.
  150. T. Yamamoto and F. J. Ohkawa,
    "Competition between Kondo Effect and RKKY Exchange Interaction in Kondo Lattices. ",
    J. Phys. Soc. Jpn, 57 (1988) 3562-3567.

2．　BOOK：
  • 高機能フィルムの開発と応用
    発刊：2016年3月17日
    体裁： B5判、303頁
    ISBNコード： 978-4-7813-1146-3
    第18章　ポリマー基板上酸化亜鉛透明導電膜:多層成膜技術と薄膜物性の特長
    　　 山本哲也 / 永元公市 / 宋華平 / 牧野久雄 / 野本淳一

  • 透明導電膜 有力材料の実力と各種プロセス技術、実用・製品化
    発刊：2012年11月22日
    体裁：B5判 ソフトカバー　309ページ
    ISBN：978-4-905545-93-4
    総論　pp. 3-4
    山本哲也

  • 透明導電膜 有力材料の実力と各種プロセス技術、実用・製品化
    発刊：2012年11月22日
    体裁：B5判 ソフトカバー　309ページ
    ISBN：978-4-905545-93-4
    酸化亜鉛系透明導電膜　第１章第１節 pp. 7-16
    山本哲也、宋華平、牧野久雄

  • 透明導電膜の新展開 IV ―多様な材料・形成技術の可能性―
    出版社：シーエムシー出版株式会社
    発刊：2012年11月1日
    体裁：B5判,282ページ
    　　 ISBN　 978-4-7813-0641-4
    第５章２　プラスチックフィルム基板上酸化亜鉛透明導電膜-成膜技術と物性
    山本哲也、永元公市、宋華平、牧野久雄

  • 超高効率太陽電池・関連材料の最前線
    出版社：シーエムシー出版株式会社
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    　　 ISBN　 978-4-7813-0310-9
    5　薄膜太陽電池用 ZnO 系透明導電膜
    山本哲也、佐藤泰史、牧野久雄、山本直樹

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    出版社：シーエムシー出版株式会社
    発刊：2011年1月31日
    体裁：B5判，287ページ
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    第7章　電気・光・スピン特性の制御と未来への展開
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    出版社：シーエムシー出版株式会社
    発刊：2011年1月31日
    体裁：B5判，287ページ
    　　 ISBN　 978-4-7813-0320-8
    第4章　透明導電膜
    1　液晶ディスプレイ用透明導電膜 pp.108-125
    山本哲也、牧野久雄、山本直樹

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    山本哲也、酒見俊之、白方祥

  • 透明導電膜の新展開III―ITOとその代替材料開発の現状―
    出版社：シーエムシー出版
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    体裁　　B5判　304ページ
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    第8章 LCD用ZnO系透明電極
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    山本哲也

  • THE　透明導電膜　最新透明導電膜大全集
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    出版社：情報機構
    発刊　　2007年12月
    体裁　　B5判　866ページ
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    第4章 酸化亜鉛透明導電膜
    第9章 第1原理電子構造計算法による酸化亜鉛マテリアルデザイン
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    出版社：株式会社　シーエムシー出版
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    発刊：2007年01月
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    第6章　酸化亜鉛、第13章　次世代透明導電膜としての酸化亜鉛透明導電膜
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  • A8.6 T.Yamamoto and H. Katayama-Yoshida:
    Theory of doping in GaN and related compounds
    Properties, Processing and Applications of Gallium Nitride and Related Compounds
    published by INSPEC, The Institution of Electrical Engineers (IEE), Londn, United Kingdom.
    Edited by:
    J. H. Edgar, Kansas State University, USA
    S. Strite, IBM Zurich, Switzerland
    I. Akasaki & H.Amano, Meijo University, Japan
    ３． REVIEW：
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    「低基板ダメージ・高速低温成膜技術による金属酸化物ナノ薄膜」
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    セラミックス 55(2020) pp. 750-753.
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    日本工業出版「クリーンテクノロジ」第30巻第2号　日工 No. 2020.02.08.10 pp. 66-70.
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    日本接着学会誌 The Adhesion Society of Japan ISSN 0916-4812 第55巻11号 pp. 404-413.
    Tetsuya Yamamoto, Hisashi Kitami, Makoto Maehara, Yutaka Furubayashi, Toshiyuki Sakemi,
    "On-Demand Metal-Oxide Polycrystalline Films Deposited by Reactive Plasma Deposition with Dc-Arc Discharge",
    Journal of The Adhesion Society of Japan, Vol. 55, No.11 (2019) pp.404-413.
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    「イオンプレーティング法 GZO シード層上への ZnO ナノロッドの CBD 成長と ZnO ナノロッド/PEDOT:PSS ヘテロ構造の形成」
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    https://www.ieice.org/ken/paper/20171201c1as/
  • 山本哲也、野本淳一、北見尚久、酒見俊之、牧野久雄、小林啓介、青木康、岸本誠一
    「アークプラズマによる酸化亜鉛導電膜機能設計」
    J. Vac. Soc. Jpn., Vol. 60, No. 8, (2017) pp. 292-299.
  • 山本哲也、野本淳一、牧野久雄、岸本誠一
    「導電性 ZnO を用いた高速応答水素ガスセンサーの研究開発」
    エネルギーデバイス、2016年4月号.
  • 山本哲也、野本淳一、牧野久雄、岩井秀夫、小林啓介
    「ダブル X 線源 X 線光電子分光分析法 (X-Ray Photoelectron Spectroscopy with Al and Cr K Alpha X-Ray Sources)」
    表面技術 (Journal of The Surface Finishing Society of Japan)　第66巻第12号, Vol. 66, No. 12 (2015) pp. 58-63.
  • 寺迫智昭、野本淳一、牧野久雄、矢木正和、白方祥、山本哲也
    「反応性プラズマ蒸着法で作成した Ga 添加 ZnO 薄膜の構造、電気、及び光学特性」
    信学技報 IEICE Technical Report CPM2015-76 (2015-10)
  • 山本哲也、永元公市、宋華平、牧野久雄、野本淳一
    「ポリマー基板上酸化亜鉛透明導電膜：多層成膜技術と薄膜物性の特長」
    機能材料 Function & Materials, Vol. 33, No. 11 (2013) pp. 45-51.
  • 山本哲也、宋華平、野本淳一、牧野久雄、岸本誠一、長田実
    「ZnO 透明導電膜:極限機能材料へのスマートプロセス」
    スマートプロセス学会誌　９月号, Journal of Smart Processing- for Materials, Environment & Energy-, Vol. 2, No. 5, (2013) pp. 236-244.
  • 山本哲也、宋華平、野本淳一、牧野久雄、岸本誠一
    「多結晶酸化亜鉛透明導電膜におけるキャリア輸送： 理論と実験的制御、粒界散乱の神話を正す」
    日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第85研究会（平成25年7月17日、主婦会館プラザエフ）資料、pp.23-31
  • 山本哲也、宋華平、牧野久雄、岸本誠一
    「直流アークプラズマを用いた Ga 添加 ZnO 透明導電膜：機能とその持続性」
    プラズマ研究会（茨城大学　2013/03/15, 16）資料　資料番号 PST-13-5
  • 山本哲也、宋華平、牧野久雄、山本直樹
    「酸化亜鉛透明導電膜の構造、電気および光学特性の特徴」
    表面技術、小特集:資源・元素戦略と表面技術、トピックス、Vol.63, No.10 (2012) pp. 625-629.
  • 山本哲也、宋華平、牧野久雄、山本直樹
    「酸化亜鉛透明導電膜の構造、電気および光学特性」
    映像情報メデイア学会誌、2012年７月号、Vol. 66, No. 7 (2012) pp. 555-560.
  • 山本哲也、山田高寛、牧野久雄、山本直樹
    「レアメタル代替材料としての酸化亜鉛透明導電膜の可能性」
    自動車技術、2009年11月号、Vol.63, No.11 (2009) pp.85-89.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹
    第６章　「ZnO ベースのと透明電極材料の開発」
    月刊デイスプレイ、2009年7月号別冊 (2009) pp.207-212.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹
    「ITO 代替材料としての ZnO 実用化研究開発の現状と課題」
    セラミックス、Vol. 44, No.5 (2009) pp. 365-370.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹
    「ZnO ベースのと透明電極材料の開発」
    月刊デイスプレイ、Vol. 15, No. 5 (2009) pp.26-31.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹
    「ZnO薄膜の可能性を徹底検証
    共通電極素材としてLCDへ応用
    RPD法成膜で実用化に向けた透明導電膜」
    Semiconductor FPD World, Technology Plus, Vol. 28, No.1 (2009) pp.64-66.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹
    「反応性プラズマ蒸着法によるZnO薄膜の特性と応用」
    マテリアルインテグレーション, Vol.21, No.10 (2008) pp.7-12.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹
    特集　可能性広がる酸化亜鉛　－実用化に向けた開発動向を探るー
    事例・トピックス「酸化亜鉛の透明導電膜実用化に向けた技術開発」
    工業材料、Vol.56 No.10 (2008) pp.45-48.
  • 山本哲也
    特集　可能性広がる酸化亜鉛　－実用化に向けた開発動向を探るー
    解説「酸化亜鉛研究開発の動向と今後の展開」
    工業材料、Vol.56 No.10 (2008) pp.18-23.
  • 山本哲也
    「透明プラスチック基板上ZnO透明導電膜」
    STEP ねっとわーく（STEP テクノ情報）Vol.14, No.2 (2008)26-27.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、山本直樹、
    「酸化亜鉛透明導電膜の光学特性制御」
    O plus E Vol.30, No.8 (2008) pp.850-854
  • 山本哲也、三宅亜紀、山田高寛、牧野久雄、山本直樹、
    「酸化亜鉛透明導電膜付プラスチック基板：最新技術の動向と研究開発状況
    株式会社矢野経済研究所 2008年5月16日
    YANO Chemicals&Materials Market&Technology、光学フィルム特集号, pp.91-104.
  • 山本哲也、山本直樹、牧野久雄、山田高寛、三宅亜紀
    「酸化亜鉛透明導電膜抗菌機能を確認」
    セラミックス、Vol. 43, No.5 (2008) pp.433.
  • 山本哲也、山本直樹、牧野久雄、山田高寛、三宅亜紀
    「酸化亜鉛」
    工業材料、第５６巻１号、(2008) pp.48-49.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、岸本誠一、山本直樹
    「ＩＴＯ代替有力候補・Ｇａ添加酸化亜鉛透明導電膜」
    月刊デイスプレイ、10月号別冊　FPD の光学材料　基礎から実用まで(2007) pp. 125-131.
  • 山本哲也、山田高寛、三宅亜紀、牧野久雄、岸本誠一、山本直樹
    「ＩＴＯ代替有力候補・Ｇａ添加酸化亜鉛透明導電膜」
    月刊デイスプレイ、3月号(2007) pp. 83-89.
  • 山本哲也
    「液晶の透明導電膜、酸化亜鉛で代替」
    セラミックス　41(2006)No.12、トピックス、pp.1056
  • 岸本誠一、山田高寛、三宅亜紀、牧野久雄、山本哲也
    「無添加酸化亜鉛薄膜の製膜初期過程の研究」
    リガクジャーナル 37(2) (2006) pp.3-7.
  • 山本哲也
    「レアメタルクライシスを乗り越え“ものづくり日本”の完全なる再生 ２１世紀材料　酸化亜鉛」
    技術総合誌「OHM」2006年4月号
  • 山本哲也
    「ベンチャー企業の本音に斬り込む・ZnOラボ」
    時代を駆けるFPD専門誌　E Express 2006年2月15日号pp.36-39
    E Express 2006年2月15号
  • 山本哲也、粟井清、岸本誠一、牧野久雄、山田高寛
    「酸化亜鉛」
    工業材料、第５４巻第1号(2006) pp.34-35.
  • 山本哲也
    「21世紀の材料 ZnO 薄膜の特性と今後の展望
    半導体分野から FPD 分野まで幅広い応用が可能で、その利点は極めて高い」
    Semiconductor FPD World, Special Issue; SEMICON Japan 2005.
    半導体産業飛躍へのシナリオとその要素技術、第２４巻、第12号、2005、pp.58-61.
  • 山本哲也
    「大面積酸化亜鉛透明導電膜創製とその応用」
    Fine Ceramics Report, Vol.23, No.4, 2005, pp. 176-178.
  • 山本哲也、酒見俊之、長田実、粟井清、岸本誠一、牧野久雄、山田高寛
    「反応性プラズマ蒸着法による酸化亜鉛透明導電膜の製膜とその物性」
    株式会社養賢堂　機械の研究　第57巻第11号2005, pp. 1142-1150.
  • 山本哲也、岸本誠一、牧野久雄、粟井清、山田晃男
    「大面積 ZnO 透明導電膜実現のための反応性プラズマ蒸着法と薄膜物性」
    ”Properties of ZnO-based transparent conductive thin films prepared by a reactive plasma deposition”
    光学　第３４巻、７月号（2005）pp.346-348.
    Japanese Journal of Optics, Vol. 34, 7 (2005)pp.346-348.
  • 山本哲也、岸本誠一、粟井清、山田晃男
    「ZnO透明導電膜の大面積化―インジウムの代替材料として注目の新技術―」
    工業材料　第53巻5月号 (2005) pp.50-53.
  • 山本哲也、池田圭吾、岸本誠一、酒見俊之、粟井清、白方祥、碇哲雄、
    中田時夫、仁木栄、矢野哲夫
    「反応性プラズマ蒸着法によるGa添加酸化亜鉛透明導電膜」
    "Transparent Conductive Ga doped ZnO Thin Films Prepared by Reactive Plasma Deposition Method",
    機能材料(FUNCTION & MATERIALS)、９月号(SEP)（2004）pp.44-54
  • 山本哲也
    「酸化亜鉛透明導電膜創製とその応用」
    STEP ねっとわーく（STEP テクノ情報）第32号、１０巻１号(2004.7)14-15.
  • 山本哲也、酒見俊之、粟井清、白方祥
    「反応性プラズマ蒸着法による酸化亜鉛透明電極膜」
    コンバーテック、第375卷6月号(2004) pp.68-71.
  • 山本哲也、酒見俊之、粟井清、白方祥、碇哲雄、中田時夫、仁木栄、矢野哲夫
    「世界初、酸化亜鉛で透明導電膜の大型化に成功」
    月刊デイスプレイ、第１０巻第６号（通巻１０９号）(2004)pp.70-74.
  • Hiroshi Katayama-Yoshida, Kazunori Kato and Tetsuya Yamamoto,
    "Materials design for ner functional semiconductors by ab initio
    electronic structure calcualtion -Prediction vs. experiment-"
    Japan Society of Applied Physics (JSAP) International No.6, July (2002)
    pp.20-28.
  • 山本哲也
    「同時ドーピング法によるナノスケール制御」
    STEP ねっとわーく（STEP テクノ情報）第28号(2002)10-11.
  • 吉田博、佐藤和則、山本哲也
    　　「第１原理計算による新機能性半導体のマテリアルデザイン」
    応用物理　第７０巻、第８号（2001）969-975.
  • 山本哲也
    「同時ドーピング法によるワイドバンドギャップ半導体の価電子制御」
    NEW DIAMOND, 第60号(2001)pp.18-23.
  • 吉田博、佐藤和則、加藤竜次、山本哲也
    [熱非平衡結晶成長における同時ドーピング法による新しい価電子制御法とスピン制御法]
    日本結晶成長学会誌2000年特集号第27巻第4号 (2000)232-240.
    H.Katayama-Yoshida, K.Sato, R. Kato, T. Yamamoto
    [New Valence Control ans Spin Control Method of Codoping in a Thermal Non-Equilibrium Crystal Growth]
  • 吉田博、佐藤和則、加藤竜次、山本哲也
    ワイドバンドギャップ半導体の新しい価電子制御法：予測と実験
    まてりあ第３９巻第９号 (2000) 749-755.
    H.Katayama-Yoshida, K.Sato, R. Kato, T. Yamamoto
    New Valence Control Method in Wide-Band-Gap Semiconductors:Prediction and Experiment
    Materia Japan, 39(2000)749-755.
  • Shigemi Kohiki, Koichi Fukuzaki and Testuya Yamamoto
    "Solar Cell of New Construction",
    Function & Materials, vol. 19, No.11, pp. 5-12 (1999)
    古曳重美、福崎浩一、山本哲也
    "新構造化合物系薄膜太陽電池"
    機能材料　第１９巻第１１号 pp.5-12 (1999)
  • 吉田博、西松毅、山本哲也、織田望：
    最近の研究、半導体における第１原理計算からの物質設計、
    まてりあ第３８巻第２号 (1999) 134-143.
  • M. Henini,
    R&D provides NTT and Asahi`s foundations,
    III-Vs Review, 12 (1998) 38-43.
  • T. Yamamoto and H. Katayama-Yoshida,
    "Control of Valence States by a Codoping Method in Wide-Bnad-Gap Semiconductors",
    Solid State Physics, in Japanese, 32(1997) 409-416.