YAMAMOTO Tetsuya

56 Tetsuya Yamamoto "Codoping for the fabrication of p-type ZnO" to be published in Thin Solid Films 55 Tetsuya Yamamoto "Codoping Method for Solutions to Doping Problems in Wide-Band-Gap Semiconductors" to be published in Vol. 193, No. 2 in physica status solidi (a). 54 Seiichi Kishimoto, Tetsuya Yamamoto, and Seishi Iida ,"Fabrication of p-Type ZnS With Blue-Ag Emission By Triple-Dodoping Method" to be published in Mater. Res. Soc. Proceedings Volume 719 and (Symposium F:Defect and Impurity Engineered Semiconductors Devices III Editors: S. Ashok, J. Chevallier, N.M. Johnson, B.L. Sopori,H. Okushi) 53 Tetsuya Yamamoto ,"Control of Valence States for ZnO and ZnS With a Wide-Band Gap by a Co-Doping Method", to be published in Mater. Res. Soc. Proceedings Volume 719 52 Shigemi Kohiki, Takayuki Suzuka, Masaoki Oku, Tetsuya Yamamoto, Seiichi Kishimoto, and Seishi Iida "Coupling of codoped In and N impurities in ZnS:Ag: Experiment and theory", J. Appl. Phys. 91 (2002) 760-763. 51 Tetsuya Yamamoto, Seiichi Kishimoto and Seishi Iida "Materials Design for p-Type ZnS with Blue Ag Emission by Triple-Codoping Method" physica status solidi (b) 229 (2002) 371-375. 50 Roland Scheer, I. Luck, M. Kanis, M. Matsui, T. Watanabe and T. Yamamoto "Incorporation of the doping elements Sn, N, and P in CuInS2 thin films prepared by co-evaporation", Thin Solid Films 392 (2001) 1 49 Tetsuya Yamamoto, Seiichi Kishimoto and Seishi Iida "Control of valence states for ZnS by triple-codoping method" Physica B: Condensed Matter, 308-310 (2001) 916-919. 48 Tetsuya Yamamoto, Takayuki Watanabe and Yoshihiro Hamashoji "Effects of codoping using Na and O on Cu-S divacancy in p-type CuInS2" Physica B: Condensed Matter, 308-310 (2001) 1007-1010. 47 H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita "Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN,p-type AlN and n-type diamond: prediction versus experiment" J. Phys.:Condensed Matter 13 (2001) 8901-8914. 46 Tetsuya Yamamoto and Hiroshi Katayama-Yoshida, "Physics and Control of Valence States in ZnO by Codoping Method" Physica B, 302/303 (2001) 155-162. 45 H. Katayama-Yoshida, R. kato and T. Yamamoto "New valence control and spin control method in GaN and AlN by codoping and transition atom doping" J. Crystal Grwoth 231 (2001) 428-436. 44 Tetsuya Yamamoto and Takayuki Watanabe "Control of deep levels in CuInS2 thin films by Na2O2 layer: Experiment and theory" Proc. 25th Int. Conf. on the Physics of Semiconductors (ICPS25), Osaka, 2000(Springer, Berlin, 2001)p.1451-1452. 43 Tetsuya Yamamoto and Hiroshi Katayama-Yoshida, "Materials design for the fabrication of p-type ZnO by codoping method" Proc. 25th Int. Conf. on the Physics of Semiconductors (ICPS25), Osaka, 2000(Springer, Berlin, 2001)p.1409-1410. 42 Tetsuya Yamamoto and Hiroshi Katayama-Yoshida, "Physics and Control of Valence States in ZnO by Codoping Method" Physica B, 302/303 (2001) 155-162. 41 Tetsuya Yamamoto, Ilka V. Luck, Roland Scheer and Hiroshi Katayama- Yoshida, "Difference in Mechanism of Compensation by Cu Vacancies between n-type Zn- and Cd-doped CuInS2" Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 395-396. 40 Tetsuya Yamamoto and Takayuki Watanabe, "Effcets of Na Incorporation on Electronic Structures pf p-type Cu- deficient CuInS2 Crystals" Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 257-258. 39 Roland Scheer, Ilka V. Luck, M. Kanis, Masahiro Matsui, Takayuki Watanabe, and Tetsuya YAMAMOTO, "Incorporation of the doping elements N and P in CuInS2 thin films by co-evaporation" Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 160-161. 38 Hiroshi Katayama-Yoshida and Tetsuya Yamamoto, "Theoretical Predictions for Codoping Properties in Wide-Band-Gap Semiconductors" Jpn. J. Appl. Phys. 39, Suppl. 39-1(2000) 229-236. 37 Tetsuya Yamamoto and Hiroshi Katayama-Yoshida, "Control of Valence States in ZnO by Co-doping Method" Mater. Res. Soc. Proc. 623 (2000) 223-234. 36 K. Sato, H. Katayama-Yoshida and T. Yamamoto, "Materilas Design for the Low-Resistivity in p-Type ZnO and Transparent Ferromagnet with Transition Metal Atom Doped ZnO: Prediction vs. Experiment" Mater. Res. Soc. Proc. 623 (2000) 65-76. 35 Hirofumi Tanaka, Hisamoto Harima, Tetsuya Yamamoto, Hiroshi Katayama- Yoshida, Yoshiyuki Nakata, and Yoshihiko Hirotsu "Electronic band structure and magnetism of Fe16N2 calculated by the FLAPW method" Phys. Rev. B62 (2000) 15042-15046. 34 Takayuki Watanabe and Tetsuya Yamamoto "Control of Defects in CuInS2 Thin Films by Incorporation of Na and O" Jpn. J. Appl. Phys. 39 (2000) L1280 - L1282. 33 Koichi Fukuzaki, Shigemi Kohiki, Tetsuya Yamamoto, Masaoki Oku and Takayuki Watanabe "Co-incorporation effects of O and Na with CuInS2 thin films" Appl. Phys. Lett. 77 (2000) 2713-2715. 32 Tetsuya Yamamoto, Ilka V. Luck and Roland Scheer "Materials Design of n-Type CuInS2 Thin Films Using Zn or Cd Speices" Appl. Surf. Sci. 159-160 (2000) 350-354. 31 Tetsuya Yamamoto, Koichi Fukuzaki and Shigemi Kohiki "Influence of incorporation of Na on p-type CuInS2 thin films" Appl. Surf. Sci. 159-160 (2000) 345-349. 30 T. Yamamoto and H. Katayama-Yoshida "Unipolarity of ZnO with a wide-band gap and its solution using codoping method", Journal of Crystal Growth 214/215 (2000) 552-555. 29 T. Yamamoto and H. Katayama-Yoshida "Effects of oxygen incorporation in p-type AlN crystals doped with carbon species", Physica B, 273-274 (1999) 113-115. 28 T. Yamamoto, I. V. Luck, R. Scheer, and H. Katayama-Yoshida "Differences in the electronic structures and compensation mechanism between n-type Zn- and Cd-doped CuInS2 crystals", Physica B, 273-274 (1999) 927-929. 27 H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita " Codoping in wide band-gap semiconductors", Inst. Phys. Conf. Ser. 162 (1999) 747-756. 25Th Int. Symp. Compound Semiconductors, Nara, Japan, 12-16 October 1998. Invited. 26 K. Fukusaki, S. Kohiki, T. Yamamoto, T. Watanabe, H. Yoshikawa, S. Fukushima and I. Kojima X-Ray Photoelectron Spectroscopy and ab-initio Electronic Band Structure Calculation of Chalcopyrite Structure CuInS2 Thin Film Surfaces, 30 (1999) 111-121. 25 T. Yamamoto and H. Katayama-Yoshida " Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO", Jpn. J. Appl. Phys. 38 (1999) L166-L169. 24 T. Yamamoto, "Effects of Na Incorporation in p-Type CuInS2", Jpn. J. Appl. Phys. 37 (1998) L1478-L1480. 23 H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita, "Comparison Between the Thoretical Prediction of Codoping and the Recent Experimental Evidences in p-type Gan, AlN, ZnSe, CuInS2 and n-type Diamond", phys. stat. sol.(b) 210 (1998) 429-436., 8th Int. Conf. Shallow-Level Centers in Semiconductors, Montpellier, 1998. Invited. 22 T. Yamamoto and H. Katayama-Yoshida gA CODOPING METHOD OF FABRICATING HIGH-CONDUCTIVITY P-TYPE SEMICONDUCTORS WITH A WIDE-BAND GAP BY AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS", Proc. of The 24th Int. Conf. on the Physics of Semiconductors, (1998). 21 T. Yamamoto and H. Katayama-Yoshida "Role of n-type Codopants on Enhancing p-type Dopants Incorporation in p-type Codoped ZnSe", Mater. Res. Soc. Proc. 510 (1998) 67-72. 20 T. Yamamoto and H. Katayama-Yoshida, "Role of Cl or I Codoping on Enhancing Li doping in ZnSe", Jpn. J. Appl. Phys. 37(1998) L910-L912. 19 T. Yamamoto and H. Katayama-Yoshida, " A CODOPING METHOD IN CuInS2 PROPOSED BY ab initio ELECTRONIC-STRUCTURE CALCULATIONS", Inst. Phys. Conf. Ser. 152 (1998) 37-41. 11Th Int. Conf. Ternary and Multinary Compounds, Salford, 1997. Invited. 18 H. Tanaka, H. Harima, T. Yamamoto, H. Katayama-Yoshida, Y. Nakata and Y. Hirotsu, " Theoretical study of electronic band structures and magnetic property of Fe16N2 based on FLAPW calculations ", J. Magnetism and Magnetic Materials, 177-181 (1998) 1468-1469. 17 T. Yamamoto and H. Katayama-Yoshida, " Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O as the donor codopants " Journal of Crystal Growth, 189/190 (1998) 532-536. 16 T. Yamamoto and H. Katayama-Yoshida, "INFLUENCE OF INTRINSIC DEFECTS AND S SUBSTITUTIONS ON ELECTRICAL PROPERTIES OF CHALCOPYRITE CuInS2 COMPOUNDS", 7th Int. Conf. on Shallow-Level Centers in Semiconductors, Amsterdam, 1996 (World Scientific, Singapore, 1997) pp. 477-82. 15 H. Katayama-Yoshida and T. Yamamoto, "New Doping Method in Semiconductors Proposed by ab initio Electronic Calculation", Proc. of the 1997 Inter. Conf. on SOLID STATE DEVICES AND MATERIALS, HAMAMATSU, (1997) 32-63. Invited. 14 T. Yamamoto and H. Katayama-Yoshida, "A Codoping Method in GaN Proposed by ab initio Electronic-Structure Calculations", Materials Science Forum 258-263 (1997) 1185-1190. 13 T. Yamamoto and H. Katayama-Yoshida, "Control of valence states by a codoping method in CuInS2", Solar Energy Materials and Solar Cells, 49 (1997) 391-397. 12 T. Yamamoto and H. Katayama-Yoshida, "CONTROL OF VALENCE STATES BY A CODOPING METHOD IN P-TYPE GaN MATERIALS", Mater. Res. Soc. Proc. 468 (1998) 105-110. 11 H. Katayama-Yoshida and T. Yamamoto, "Materials Design of the Codoping for the Fabrication of Low-resistivity p-type ZnSe and GaN by ab-initio Electronic Structure Calculations", phys. Stat. Sol. (b) 202, (1997) 763-773. 10 T. Yamamoto and H. Katayama-Yoshida, "Materials Design for the Fabrication of Low-resistivity p-Type GaN Using a Codoping Method", Jpn. J. Appl. Phys. 36 (1997) L180-L183. 9 T. Yamamoto and H. Katayama-Yoshida , "p-Type Doping of Group V Elements in CuInS2", Jpn. J. Appl. Phys. 36 (1996) L1562-L1565. 8 T. Yamamoto and H. Katayama-Yoshida , "Electronic Structure of p-Type CuInS2", Mater. Res. Soc. Proc. 426 (1996) 201-206. 7 T. Yamamoto and H. Katayama-Yoshida, "Electronic Structures and Effects of S Substitutions in CuIn(S0.875X0.125)2 (X=O, N, P, C, Si or B)", Jpn. J. Appl. Phys. 35 (1996) L370-L373. 6 T. Yamamoto and H. Katayama-Yoshida, "New Functionality of Magnetic-Semiconductor-Hybrid Quantum-Dot", Application magnetism study group data, MSJ 92-5 5 T. Yamamoto and H. Katayama-Yoshida, "Physics and Control of Conduction Type in CuInS2 with Defect Chalcopyrite Structure", Jpn. J. Appl. Phys. 34 (1995) L1584-L1587. 4 T. Yamamoto and H. Katayama-Yoshida, "THE ELECTRONIC STRUCTURE OF NON-STOICHIOMETRIC CuInS2 AND THE STUDY OF DEFECTS LEVELS OF CuInS2 WITH CHALCOPYRITE STRUCTURE", Crystal Research and Technology, 31 (1995) 97-100. 3 T. Yamamoto and H. Katayama-Yoshida, "INFLUENCE OF INTRINSIC DEFECTS ON THE ELECTRONIC STRUCTURE OF NON-STOICHIOMETRIC CuInS2 CHALCOPYRITE STRUCTURE", Materials Science Forum, Switzerland 196-201 (1996) 1667-1672. 2 Fusayoshi J. Ohkawa and Tetsuya Yamamoto, "ATTRACTIVE INTERACTIONS DUE TO RKKY EXCHANGE INTERACTIONS IN HEAVY ELECTRON SUPERCONDUCTORS", Physica 148B (1987) 84-86. 1 T. Yamamoto and F. J. Ohkawa, "Competition between Kondo Effect and RKKY Exchange Interaction in Kondo Lattices. ", J. Phys. Soc. Jpn, 57 (1988) 3562-3567.

 

YAMAMOTO Tetsuya

1 A8.6 T.Yamamoto and H. Katayama-Yoshida: Theory of doping in GaN and related compounds Properties, Processing and Applications of Gallium Nitride and Related Compounds published by INSPEC, The Institution of Electrical Engineers (IEE), Londn, United Kingdom. Edited by: J. H. Edgar, Kansas State University, USA S. Strite, IBM Zurich, Switzerland I. Akasaki & H.Amano, Meijo University, Japan

 

YAMAMOTO Tetsuya

8 H.Katayama-Yoshida, K.Sato, R. Kato, T. Yamamoto The material design of the new functionality semiconductor by the 1st principle calculation, OYOBUTURI The 70th volume, No. 8,2001,969-975. 7 T.Yamamoto Valence Control of a wideband gap semiconductor with Codoping method NEW DIAMOND, Volume 60th(2001)pp.18-23. [Japanese] 6 H.Katayama-Yoshida, K.Sato, R. Kato, T. Yamamoto New Valence Control ans Spin Control Method of Codoping in a Thermal Non-Equilibrium Crystal Growth Volume [ of Japanese crystal growth society magazine 2000 special number / 27th ] No. 4(2000)232-240. 5 H.Katayama-Yoshida, K.Sato, R. Kato, T. Yamamoto New Valence Control Method in Wide-Band-Gap Semiconductors:Prediction and Experiment Materia Japan, 39(2000)749-755. 4 H.Yoshida. T.Nishimatsu, T.Yamamoto, N.Oda: The latest research, the substance design from the 1st principle calculation in a semiconductor Volume [ of MATERIA / 38th ] No. 2(1999) 134-143. 3 Shigemi Kohiki, Koichi Fukuzaki and Testuya Yamamoto "Solar Cell of New Construction", Function & Materials, vol. 19, No.11, pp. 5-12 (1999) 2 M. Henini, R&D provides NTT and Asahi`s foundations, III-Vs Review, 12 (1998) 38-43. 1 T. Yamamoto and H. Katayama-Yoshida, "Control of Valence States by a Codoping Method in Wide-Bnad-Gap Semiconductors", Solid State Physics, in Japanese, 32(1997) 409-416.

 

HAMASHOUJI Yoshihiro

3 T.Yamamoto, Y.Hamashouji, "Electronic structure of p type doped ZnO:Li, N, and or As", The 62nd Japan Society of Applied Physics academic lecture meeting 2 T.Yamamoto,T.Watanabe and Y.Hamashoji, "EFFECTS OF CODOPING USING Na AND O ON Cu-S DIVANCY IN p-TYPE CuInS2", 21th International Conference on Defects in Semiconductors 1 HAMASHOUJI Yoshihiro and TANAKA Momoe, "About relation by the upward rise development and industrial technology in a company", Engineering educational program Cyugoku and the Shikoku area lecture meeting